| No. | Partie # | Fabricant | Description | Fiche Technique |
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Panasonic |
Silicon N-Channel 4-pin MOSFET 0.65±0.15 2.9±0.2 1.9±0.2 1.5 –0.3 0.65±0.15 1.1 –0.1 +0.2 Parameter Symbol Ratings 15 Unit V V V Drain to Source voltage VDS Gate 2 to Source voltage Drain current VG2S ID PD ±8 ±30 200 150 mA Allowable power dissipation Channel temp |
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