डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
3DG130 | NPN Silicon High Frequency Middle Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DG130
NPN Silicon High Frequency Middle Power Transistor
Features: 1. Using epitaxy planar technology structure. High working f |
Shaanxi Qunli |
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3DG13007 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage
: VCE(sat) = 2.0(Max) @ IC= 5.0A ·Switching |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |