डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
3DD7D | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.75A ·Minimum Lot-to-Lot variation |
INCHANGE |
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3DD741A8 | Silicon NPN Transistor | Huajing Microelectronics |
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3DD7C | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD7A | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD742A8 | Silicon NPN Transistor | Huajing Microelectronics |
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3DD7G | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD7B | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD7D | NPN Transistor | INCHANGE |
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3DD7F | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD7525A3 | Silicon NPN bipolar transistor | Huajing Microelectronics |
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3DD7E | Silicon NPN Power Transistor | Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |