डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
3DD200D | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage-
: VCE(sat)= 1.4V(Max)@ IC = 8A ·Minimum Lot-to-Lot variations |
INCHANGE |
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3DD200 | Silicon Power Transistor | Inchange |
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3DD200D | NPN Transistor | INCHANGE |
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