डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
33N10 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
FEATURES · Static drain-source on-resistance:
RDS(on) ≤60mΩ · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust |
Inchange Semiconductor |
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33N10 | FQP33N10 FQP33N10
April 2000
QFET
FQP33N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS te |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |