डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK960 | N-CHANNEL SILICON POWER MOSFET |
Fuji |
|
2SK960 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK960-MR
FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 5.0Ω(Max) @ VGS= 10V ·100% av |
Inchange Semiconductor |
|
2SK960-MR | N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
|
2SK960-MR | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK960-MR
FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 5.0Ω(Max) @ VGS= 10V ·100% av |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |