| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
N-Channel MOSFET Transistor =25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS=25V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=10A IGSS Gate Source Leakage Current VGS= ±20V; |
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Panasonic |
Silicon N-Channel Power F-MOS FET |
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