डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK805 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage-
: VDSS=200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and |
Inchange Semiconductor |
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2SK805 | Silicon N-Channel Power F-MOS FET |
Matsushita Electric |
www.DataSheet.in | 2017 | संपर्क |