डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK667 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and r |
Inchange Semiconductor |
|
2SK660 | N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR | NEC |
|
2SK669 | N-Channel MOSFET | Sanyo Semicon Device |
|
2SK662 | N-Channel MOSFET | Panasonic Semiconductor |
|
2SK664 | Silicon N-Channel MOS FET | Panasonic Semiconductor |
|
2SK662 | Silicon N-Channel Junction FET | Panasonic Semiconductor |
|
2SK663 | Silicon N-Channel Junction FET | Panasonic Semiconductor |
|
2SK663 | N-Channel MOSFET | Panasonic Semiconductor |
|
2SK665 | Silicon MOS FETs | Panasonic Semiconductor |
|
2SK667 | N-Channel MOSFET Transistor | Inchange Semiconductor |
|
2SK665 | N-Channel MOSFET | Panasonic Semiconductor |
www.DataSheet.in | 2017 | संपर्क |