2SK65 डाटा शीट PDF( Datasheet )

Silicon Junction FETs (Small Signal) 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Fea

Silicon MOS FETs (Small Signal) 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm For switching I Features 0.75 max. 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Dra

Silicon MOS FETs (Small Signal) 2SK0656 (2SK656) Silicon N-Channel MOS FET For switching 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Sourc

Silicon MOS FETs (Small Signal) 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 6.9±0.1 (0.4) 2.5±0.1 (1.0) (1.0) 3.5±0.1 2.0±0.2 2.4±0.2 (1.5) (1.5) I Features 1.0±0.1 (0.85) 1.2

isc N-Channel MOSFET Transistor 2SK659 FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100% avalanc