डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK56 | 8Ii-N-cHANNEL Junction FET |
ETC |
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2SK560 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus |
Inchange Semiconductor |
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2SK560 | Silicon N-Channel MOSFET |
Renesas |
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2SK562 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK562
FEATURES ·Drain Current –ID=39A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 50V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for |
Inchange Semiconductor |
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2SK564 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=32A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
Inchange Semiconductor |
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2SK565 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=9.6A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
Inchange Semiconductor |
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2SK566 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=2.9A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |