2SK43 डाटा शीट PDF( Datasheet )

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isc N-Channel MOSFET Transistor 2SK430L FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) @ VGS= 15V ·100% aval

isc N-Channel MOSFET Transistor 2SK430S FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) @ VGS= 15V ·100% aval

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2SK435 Silicon N-Channel Junction FET Application Low frequency / High frequency amplifier Outline TO-92 (2) 1. Drain 2. Source 3. Gate 3 2 1 2SK435 Absolute Maximum Ratings (Ta = 25°C) Item Drain to sourc

Ordering number:EN1405B N-Channel Junction Silicon FET 2SK436 High-Frequency, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · AM tuner RF amplifiers and low-noise amp