2SK4161D डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=100A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.8mΩ(Max) ·100% avalanche tested ·Minim

60 V, 100 A, 3.8 mΩ Low RDS(ON) N ch Trench Power MOSFET 2SK4161D Features ● V(BR)DSS ---------------------------------60 V (ID = 100 μA) ● ID -------------------------------------------------------- 100