2SK416 डाटा शीट PDF( Datasheet )

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=100A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.8mΩ(Max) ·100% avalanche tested ·Minim

60 V, 100 A, 3.8 mΩ Low RDS(ON) N ch Trench Power MOSFET 2SK4161D Features ● V(BR)DSS ---------------------------------60 V (ID = 100 μA) ● ID -------------------------------------------------------- 100

www.DataSheet4U.com Ordering number : ENA0736 2SK4164 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4164 Features • • • General-Purpose Switching Device Applications Low ON-resistance

isc N-Channel MOSFET Transistor 2SK416L FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @ VGS= 15V ·100% avala

isc N-Channel MOSFET Transistor 2SK416S FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @ VGS= 15V ·100% avala