डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK415 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus |
Inchange Semiconductor |
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2SK415 | HIGH SPEED POWER SWITCHING www.DataSheet4U.com
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Hitachi Semiconductor |
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2SK4150 | N-Channel MOSFET Preliminary www.DataSheet4U.com Datasheet
2SK4150
Silicon N Channel MOS FET High Speed Power Switching
Features
Capable of 2.5 V gate drive Low drive current Low on-resistance RDS(on) = 4.0 typ |
Renesas Technology |
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2SK4151 | N-Channel MOSFET www.DataSheet4U.com
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corpo |
Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |