डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3887-01 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3887-01
FEATURES ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.0Ω(Max) ·100% avalanche te |
Inchange Semiconductor |
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2SK3887-01 | N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
www.DataSheet.in | 2017 | संपर्क |