2SK388 डाटा शीट PDF( Datasheet )

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2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK3880 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward tran

isc N-Channel MOSFET Transistor 2SK3880 FEATURES ·Drain Current : ID= 6.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.7Ω(Max) ·100% avalanche teste

isc N-Channel MOSFET Transistor 2SK3882-01 FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) ·100% avalanche te

isc N-Channel MOSFET Transistor 2SK3886-01MR FEATURES ·Drain Current : ID= 67A@ TC=25℃ ·Drain Source Voltage : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 30mΩ(Max) ·100% avalanche t

isc N-Channel MOSFET Transistor 2SK3887-01 FEATURES ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·100% avalanche te