2SK3778-01 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK3778-01 FEATURES ·Drain Current : ID= 59A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 53mΩ(Max) @ VGS= 10V ·100% av

2SK3778-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET www.DataSheet4U.com Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-p