डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3767 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3767
FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.5Ω(Max) @ VGS= 10V ·100% aval |
Inchange Semiconductor |
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2SK3767 | Silicon N-Channel MOSFET www.DataSheet4U.com
2SK3767
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3767
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ |
Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |