डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK376 | N-Channel Silicon FET |
Sanyo |
|
2SK3760 | N-Channel MOSFET www.DataSheet4U.com
2SK3760
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y )
2SK3760
unit•F‚•‚•
Switching Regulator Applications
3.84•} 0 .2
3.84•}0.2
10.5 10.5max max
|
Toshiba Semiconductor |
|
2SK3761 | N-Channel MOSFET www.DataSheet4U.com
2SK3761
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y )
2SK3761
unit•F‚•‚•
Switching Regulator Applications
3.84•}0.2
3.84•} 0 .2
10.5 10.5 max max
|
Toshiba Semiconductor |
|
2SK3762 | N-Channel MOSFET www.DataSheet4U.com
2SK3762
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡W )
2SK3762
unit•F‚•‚•
Switching Regulator Applications
3.84•}0.2
3.84•} 0 .2
10.5 10.5 max max
|
Toshiba Semiconductor |
|
2SK3763 | N-Channel MOSFET www.DataSheet4U.com
2SK3763
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV)
2SK3763
unit•F‚•‚•
Switching Regulator Applications
3.84•} 0 .2
3.84•}0.2
10.5 10.5max max
4. |
Toshiba Semiconductor |
|
2SK3766 | Silicon N-Channel MOS Type FET 2SK3766
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
www.DataSheet4U.com
2SK3766
Unit: mm
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1 |
Toshiba Semiconductor |
|
2SK3767 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3767
FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.5Ω(Max) @ VGS= 10V ·100% aval |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |