डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3726-01MR | N-CHANNEL SILICON POWER MOSFET 2SK3726-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
200305
N-CHANNEL SILICON POWER MOSFET
Outline Drawings |
Fuji Electric |
|
2SK3726-01MR | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3726-01MR
FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 450V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2.5Ω(Max) @ VGS= 10V ·100% |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |