2SK372 डाटा शीट PDF( Datasheet )

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK372 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications 2SK372 Unit: mm · High breakdown voltage: VGDS

Ordering number : ENN8173A 2SK3720 www.DataSheet4U.com N-Channel Silicon MOSFET 2SK3720 Features • • • FM Tuner, VHF-Band Amplifier Applications Low noise. High power gain. Small reverse transfer ca

SMD Type TransistIoCrs N-channel Enhancement Mode MOSFET 2SK3723 Features Low on-resistance, low Qg High avalanche resistance For high-speed switching + 5 .2 8 0.2 -0.2 + 8 .7 0.2 -0.2 TO-263 +0.2 4.57

MOS FET 2SK3724 (under development) Features ● ON resistance 0.005Ω max. ● Built-in G-S bidirectional Zener diode ● Trench MOS structure Applications ● Power steering motor ● Various motors ● Re

2SK3725-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Pow

isc N-Channel MOSFET Transistor 2SK3725-01 FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max) @ VGS= 10V ·100% a

2SK3726-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200305 N-CHANNEL SILICON POWER MOSFET Outline Drawings