डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3681 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 160mΩ(Max) ·With low gate drive requirements ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic |
INCHANGE |
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2SK3681-01 | N-CHANNEL SILICON POWER MOSFET 2SK3681-01
FUJI POWER MOSFET
Super FAP-G Series
200401
N-CHANNEL SILICON POWER MOSFET
Features
Outline Drawings [mm]
High speed switching No secondary breadown Avalanche-proof
Low on-resistance Low driving |
Fuji Electric |
|
2SK3681-01 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and re |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |