2SK3680 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK3680 FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.11Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performa

www.DataSheet4U.com 2SK3680-01 FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-res