डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK368 | N-Channel MOSFET TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK368
Audio Frequency and High Voltage Amplifier Applications Constant Current Applications
2SK368
Unit: mm
· High breakdown voltage: VGDS = |
Toshiba Semiconductor |
|
2SK3680 | N-Channel MOSFET isc N-Channel MOSFET Transistor
2SK3680
FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.11Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performa |
INCHANGE |
|
2SK3680-01 | N-CHANNEL SILICON POWER MOSFET www.DataSheet4U.com
2SK3680-01
FUJI POWER MOSFET
200309
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching No secondary breadown Avalanche-proof Low on-res |
Fuji Electric |
|
2SK3681 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 160mΩ(Max) ·With low gate drive requirements ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic |
INCHANGE |
|
2SK3681-01 | N-CHANNEL SILICON POWER MOSFET 2SK3681-01
FUJI POWER MOSFET
Super FAP-G Series
200401
N-CHANNEL SILICON POWER MOSFET
Features
Outline Drawings [mm]
High speed switching No secondary breadown Avalanche-proof
Low on-resistance Low driving |
Fuji Electric |
|
2SK3681-01 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and re |
INCHANGE |
|
2SK3682-01 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3682-01
FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100% a |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |