डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3679-01MR | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3679-01MR
FEATURES ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.58Ω(Max) @ VGS= 10V ·100 |
Inchange Semiconductor |
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2SK3679-01MR | N-CHANNEL SILICON POWER MOSFET 2SK3679-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220F 200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Ava |
Fuji Electric |
www.DataSheet.in | 2017 | संपर्क |