2SK359 डाटा शीट PDF( Datasheet )

2SK359 Silicon N-Channel MOS FET Application VHF amplifier Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 2SK359 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage

2SK3590-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings (m

isc N-Channel MOSFET Transistor 2SK3590-01 FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 41mΩ(Max) @ VGS= 10V ·100% av

isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 41mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and

2SK3591-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings

www.DataSheet4U.com 2SK3592-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWE

www.DataSheet4U.com 2SK3592-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWE