डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3567 | N-Channel MOSFET 2SK3567
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3567
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.) High forward trans |
Toshiba Semiconductor |
|
2SK3567 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3567
FEATURES ·Drain Current : ID= 3.5A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2.2Ω(Max) @ VGS= 10V ·100% aval |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |