डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3563 | N-Channel MOSFET DataSheet.in
TENTATIVE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ)
2SK3563
2SK3563
unit:mm
Switching Regulator Applications
10±0.3
Maximum Ratings (Ta = 25°C)
Characteris |
Toshiba Semiconductor |
|
2SK3563 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3563
FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.5Ω(Max) @ VGS= 10V ·100% avalan |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |