डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3561 | Silicon N-Channel MOSFET 2SK3561
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3561
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer a |
Toshiba |
|
2SK3561 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3561
FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.85Ω(Max) @ VGS= 10V ·100% avala |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |