2SK356 डाटा शीट PDF( Datasheet )

2SK356 SILICON N CHANNEL MOS TYPE (7T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DTIVE APPLICATIONS. FEATURES . Low Drain-Source ON Resistance : RdS

Power MOSFETs 2SK3560 Silicon N-channel power MOSFET For PDP/For high-speed switching ■ Features • Low on-resistance, low Qg • High avalanche resistance 10.1±0.3 (1.4) 10.5±0.3 4.6±0.2 1.4±0.1 Unit:

SMD Type Silicon N-channel power MOSFET 2SK3560 TO-263 + 0 .1 1 .2 7 -0 .1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low on-resistance, low Qg High avalanche resistance For high-speed swit

2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer a

isc N-Channel MOSFET Transistor 2SK3561 FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) @ VGS= 10V ·100% avala

2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3562 Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.9 Ω (typ.) • High forward transfer ad

isc N-Channel MOSFET Transistor 2SK3562 FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.25Ω(Max) @ VGS= 10V ·100% avala