2SK355 डाटा शीट PDF( Datasheet )

SILICON N CHANNEL MOS TYPE (7T-MOS) 2SK355 ° HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES . Low Drain-Source ON Resistance :

www.DataSheet4U.com Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3550-01R (900V/1.4Ω/10A) TO-3PF PRELIMINARY 1) Package Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Curr

isc N-Channel MOSFET Transistor 2SK3550-01R FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) @ VGS= 10V ·100% a

2SK3554-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

isc N-Channel MOSFET Transistor 2SK3554-01 FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) @ VGS= 10V ·100% av

2SK3555-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings

isc N-Channel MOSFET Transistor 2SK3555-01MR FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) @ VGS= 10V ·100%