डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3529-01 | N-CHANNEL SILICON POWER MOSFET 2SK3529-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Ava |
Fuji |
|
2SK3529-01 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3529-01
FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.9Ω(Max) @ VGS= 10V ·100% ava |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |