2SK3501 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK3501 FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100% aval

2SK3501-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB