डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3484 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3484
FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 125mΩ(Max) @ VGS= 10V ·100% aval |
Inchange Semiconductor |
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2SK3484 | SWITCHING N-CHANNEL POWER MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3484
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3484 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
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NEC |
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2SK3484 | MOSFET SMD Type
MOS Field Effect Transistor 2SK3484
TO-252
www.DataSheet4U.com
IC MOSFET
Features
Super low on-state resistance: RDS(on)1 = 125m RDS(on)2 = 148m MAX. (VGS = 10 V, ID = 8A)
+0.2 9.70-0.2
Unit: mm
+0 |
Guangdong Kexin Industrial |
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2SK3484-Z | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3484-Z
FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 125mΩ(Max) @ VGS= 10V ·100% av |
Inchange Semiconductor |
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2SK3484-ZK | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3484-ZK
FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 125mΩ(Max) @ VGS= 10V ·100% a |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |