2SK3481 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK3481 FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) @ VGS= 10V ·100% avala

SMD Type MOS Field Effect Transistor 2SK3481 TO-263 Features Super low on-state resistance: RDS(on)1 = 50 m RDS(on)2 = 58 m MAX. (VGS = 10 V, ID = 15A) +0.2 8.7-0.2 +0.1 1.27-0.1 www.DataSheet4U.com MOSFET U

DATA SHEET MOS FIELD EFFECT www.DataSheet4U.com TRANSISTOR 2SK3481 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching appli

isc N-Channel MOSFET Transistor 2SK3481-S FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) @ VGS= 10V ·100% ava

isc N-Channel MOSFET Transistor 2SK3481-Z FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) @ VGS= 10V ·100% ava

isc N-Channel MOSFET Transistor 2SK3481-ZJ FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) @ VGS= 10V ·100% av