डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3479 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3479
FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 11mΩ(Max) @ VGS= 10V ·100% avala |
Inchange Semiconductor |
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2SK3479 | SWITCHING N-CHANNEL POWER MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3479
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING I |
NEC |
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2SK3479 | MOS Field Effect Transistor SMD Type
MOS Field Effect Transistor 2SK3479
TO-263
+0.1 1.27-0.1
MOSFET
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Super low on-state resistance: RDS(on)1 = 11 m RDS(on)2 = 13 m MAX. (VGS = 10 V, ID = 42 |
Kexin |
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2SK3479-S | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3479-S
FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 11mΩ(Max) @ VGS= 10V ·100% ava |
Inchange Semiconductor |
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2SK3479-Z | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3479-Z
FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 11mΩ(Max) @ VGS= 10V ·100% ava |
Inchange Semiconductor |
|
2SK3479-ZJ | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3479-ZJ
FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 11mΩ(Max) @ VGS= 10V ·100% av |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |