डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK346 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK346
FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100% avalanch |
Inchange Semiconductor |
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2SK346 | Silicon N-Channel MOSFET |
Hitachi |
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2SK3460 | N-Channel MOSFET 2SK3460
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 150 +20, –10 ± 18 ± 72 35 (Tc = 25ºC) 180 18 150 –55 to +150
(Ta = 25ºC)
External dimensions 1 ...... |
Sanken |
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2SK3462 | N-Channel MOSFET 2SK3462
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
www.DataSheet4U.com
2SK3462
Unit: mm
Switching Regulator, DC/DC Converter and Motor Drive Applications
• • • • • 4 V gate |
Toshiba Semiconductor |
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2SK3466 | N-Channel MOSFET 2SK3466
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3466
Chopper Regulator
Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: ïYf |
Toshiba Semiconductor |
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2SK3467 | SWITCHING N-CHANNEL POWER MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3467
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3467 is N-Channel MOS FET device that features a low on-state resistance and excellent switc |
NEC |
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2SK3468 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3468
FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.52Ω(Max) @ VGS= 10V ·100% aval |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |