2SK345 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK345 FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100% avalanch

isc N-Channel MOSFET Transistor 2SK3450 FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100% aval

2SK3450-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET 200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [m

2SK3451-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [

2SK3451-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [

www.DataSheet4U.com 2SK3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3453 Switching Regulator Applications · · · · Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.)