2SK3270-01 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK3270-01 FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) @ VGS= 10V ·100% av

2SK3270-01 Trench Gate MOSFET > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 6,5mΩ ±80A 135W > Outline Drawing > Applications - Mo