2SK322 डाटा शीट PDF( Datasheet )

2SK322 Silicon N-Channel Junction FET Application HF wide band amplifier Outline MPAK 3 1 2 1. Drain 2. Source 3. Gate 2SK322 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source

isc N-Channel MOSFET Transistor 2SK3221 FEATURES ·Drain Current : ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.4Ω(Max) @ VGS= 10V ·100% avalan

isc N-Channel MOSFET Transistor 2SK3221-AZ FEATURES ·Drain Current : ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.4Ω(Max) @ VGS= 10V ·100% ava

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3224 2SK3224-Z PACKAGE TO-251 TO-252 DESCRIPTION This product is N-Channel

2SK3228 Silicon N Channel MOS FET High Speed Power Switching ADE-208-765A(Z) Target specification 2nd. Edition December 1998 Features • Low on-resistance R DS(on) =6mΩ typ. • Low drive current • 4V gat

2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be d