2SK3218 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK3218 FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 43mΩ(Max) @ VGS= 10V ·100% avala

2SK3218-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220AB Applications Switching regulator