2SK3212 डाटा शीट PDF( Datasheet )

2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can

2SK3212 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1092