2SK321 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SK321 | N-Channel MOSFET |
 Panasonic Semiconductor |
|
| 2SK3211 | N-Channel MOSFET 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate d |
 Hitachi Semiconductor |
|
| 2SK3211 | Silicon N Channel MOS FET 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
RE |
 Renesas |
|
| 2SK3211L | N-Channel MOSFET 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate d |
Hitachi Semiconductor |
|
| 2SK3211L | Silicon N Channel MOS FET 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
RE |
Renesas |
|
| 2SK3211S | N-Channel MOSFET 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate d |
Hitachi Semiconductor |
|
| 2SK3211S | Silicon N Channel MOS FET 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
RE |
Renesas |
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