डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3209 | N-Channel MOSFET 2SK3209
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features
• Low on-resistance R DS =35mΩ typ. • High speed switching • 4V gate |
Hitachi Semiconductor |
|
2SK3209 | Silicon N Channel MOS FET 2SK3209
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 40 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G109 |
Renesas |
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