2SK3163 डाटा शीट PDF( Datasheet )

2SK3163 Silicon N Channel MOS FET High Speed Power Switching ADE-208-736A (Z) 2nd Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can

2SK3163 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Pa