2SK3162 डाटा शीट PDF( Datasheet )

2SK3162 Silicon N Channel MOS FET High Speed Power Switching ADE-208-735B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS = 60 mΩ typ. • High speed switching • 4 V gate drive device ca

2SK3162 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G108