डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK316 | N-Channel MOSFET |
Panasonic Semiconductor |
|
2SK3160 | Silicon N-Channel MOSFET 2SK3160
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-751 (Z) 1st. Edition February 1999 Features
• Low on-resistance R DS = 130 mΩ typ. • High speed switching • 4 V gate drive device ca |
Hitachi Semiconductor |
|
2SK3160 | N-Channel MOSFET 2SK3160
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =130 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G108 |
Renesas |
|
2SK3161 | Silicon N-Channel MOSFET 2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-734A (Z) 2nd. Edition February 1999 Features
• Low on-resistance R DS = 90 mΩ typ. • High speed switching • 4 V gate |
Hitachi Semiconductor |
|
2SK3161 | N-Channel MOSFET 2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =90 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outl |
Renesas |
|
2SK3161L | Silicon N-Channel MOSFET 2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-734A (Z) 2nd. Edition February 1999 Features
• Low on-resistance R DS = 90 mΩ typ. • High speed switching • 4 V gate |
Hitachi Semiconductor |
|
2SK3161L | N-Channel MOSFET 2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =90 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outl |
Renesas |
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