2SK3159 डाटा शीट PDF( Datasheet )

2SK3159 Silicon N Channel MOS FET High Speed Power Switching ADE-208-774 (Z) Target Specification 1st. Edition February 1999 Features • Low on-resistance R DS = 23 mΩ typ. • High speed switching • 4 V

2SK3159 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 23 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS P