2SK3152 डाटा शीट PDF( Datasheet )

2SK3152 Silicon N Channel MOS FET High Speed Power Switching ADE-208-732 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device ca

2SK3152 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G107

isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 130mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance an